Material choices for 4o Gb/s: SiGe vs GaAs and InP

Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP

This paper presents a comprehensive comparison of three state-of-the-art heterojunction bipolar transistors (HBTs); the AlGaAs/GaAs HBT, the Si/SiGe HBT and the InGaAs/InP HBT. Our aim in this paper is to find the potentials and limitations of these devices and analyze them under common Figure of Merit (FOM) definitions as well as to make a meaningful comparison which is necessary for a technol...

Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

I. GaAs Material Properties

Mechanical deformation of InP and GaAs by spherical indentation

The mechanical deformation by spherical indentation of both crystalline InP and GaAs was characterized using cross-sectional transmission electron microscopy ~XTEM! and atomic force microscopy. All load–unload curves show a discontinuity ~or ‘‘pop in’’! during loading. Slip bands oriented along $111% planes are visible in XTEM micrographs from residual indentations in both materials and no evid...

InP/(Al,Ga)InP Quantum Dots on GaAs- and Si-Substrates for Single-Photon Generation at Elevated Temperatures

Religion is an insult to human dignity. Without it you would have good people doing good things and evil people doing evil things. But for good people to do evil things, that takes religion. (Steven Weinberg 1999) This work concentrates on optical investigation on single-photon generation for applications in communications, quantum cryptography, and quantum computing. Single-photon sources for ...